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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Name: Stress and Strain Engineering at Nanoscale in Semiconductor Devices
ISBN: 9780367519292

Chinmay K. Maiti

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Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale.

Categorie:

Engineering

Anno:

2021

Edizione:

Casa editrice:

CRC Press

Lingua:

english

Pagine:

260

ISBN 10: